Effet getter dans les plaquettes de silicum multicristallin par diffusion de phosphore = Gettering effect in multicrystalline silicon wafers by phosphorus diffusionPERICHAUD, I; MARTINUZZI, S.Journal de physique 3, Applied physics, materials science, fluids, plasma and instrumentation. 1992, Vol 2, Num 3, pp 313-324Article

Segregation phenomena in large-size cast multicrystalline Si ingotsMARTINUZZI, S; PERICHAUD, I; PALAIS, O et al.Solar energy materials and solar cells. 2007, Vol 91, Num 13, pp 1172-1175, issn 0927-0248, 4 p.Article

Aluminium gettering in silicon wafersMARTINUZZI, S; PORRE, O; PERICHAUD, I et al.Journal de physique. III (Print). 1995, Vol 5, Num 9, pp 1337-1343, issn 1155-4320Conference Paper

Toward low cost polycrystalline silicon wafers for high efficiency solar cellsMARTINUZZI, S; PERICHAUD, I; GERVAIS, J et al.Applied solar energy. 1992, Vol 28, Num 6, pp 38-45, issn 0003-701XConference Paper

n-Type Multicrystalline Silicon Wafers Prepared from Plasma Torch Refined Upgraded Metallurgical FeedstockMARTINUZZI, S; PERICHAUD, I; TRASSY, C et al.Progress in photovoltaics (Print). 2009, Vol 17, Num 5, pp 297-305, issn 1062-7995, 9 p.Article

Solar cells with 15.6% efficiency on multicrystalline silicon, using impurity gettering, back surface field and emitter passivationLE QUANG NAM; RODOT, M; GHANNAM, M et al.International journal of solar energy. 1992, Vol 11, Num 3-4, pp 273-279, issn 0142-5919Article

Minority carrier bulk lifetimes through a large multicrystalline silicon ingot and related solar cell propertiesMARTINUZZI, S; GAUTHIER, M; BARAKEL, D et al.EPJ. Applied physics (Print). 2007, Vol 40, Num 1, pp 83-88, issn 1286-0042, 6 p.Article

Passivation of dislocations in silicon by hydrogenationPERICHAUD, I; EL GHITANI, H; MARTINUZZI, S et al.Physica. B, Condensed matter. 1991, Vol 170, Num 1-4, pp 553-556, issn 0921-4526, 4 p.Conference Paper

n-p Junction formation in p-type silicon by hydrogen ion implantationBARAKEL, D; ULYASHIN, A; PERICHAUD, I et al.Solar energy materials and solar cells. 2002, Vol 72, Num 1-4, pp 285-290, issn 0927-0248Conference Paper

Efficiency of cavity gettering in single and in multicrystalline silicon wafersMARTINUZZI, S; HENQUINET, N. G; PERICHAUD, I et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 71, Num 1-3, pp 229-232, issn 0921-5107Conference Paper

Influence of oxygen on the recombination strength of dislocations in silicon wafersSIMON, J. J; PERICHAUD, I.Materials science & engineering. B, Solid-state materials for advanced technology. 1996, Vol 36, Num 1-3, pp 183-186, issn 0921-5107Conference Paper

Multicrystalline silicon prepared by electromagnetic continuous pulling: recent results and comparison to directional solidification materialPERICHAUD, I; MARTINUZZI, S; DURAND, F et al.Solar energy materials and solar cells. 2002, Vol 72, Num 1-4, pp 101-107, issn 0927-0248Conference Paper

Solar cells from upgraded metallurgical grade (UMG) and plasma-purified UMG multi-crystalline silicon substratesDE WOLF, S; SZLUFCIK, J; DELANNOY, Y et al.Solar energy materials and solar cells. 2002, Vol 72, Num 1-4, pp 49-58, issn 0927-0248Conference Paper

Synergy of phosphorus gettering and hydrogenation in multicrystalline silicon wafers and cellsMARTINUZZI, S; PERICHAUD, I; DE WOLF, S et al.sans titre. 2002, pp 170-173, isbn 0-7803-7471-1, 4 p.Conference Paper

Hydrogen passivation of newly developed EMC-multi-crystalline siliconEINHAUS, R; DUERINCKX, F; PERICHAUD, I et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1999, Vol 58, Num 1-2, pp 81-85, issn 0921-5107Article

Micro and nano-structuration of silicon by femtosecond laser : Application to silicon photovoltaic cells fabricationHALBWAX, M; SARNET, T; DELAPORTE, Ph et al.Thin solid films. 2008, Vol 516, Num 20, pp 6791-6795, issn 0040-6090, 5 p.Conference Paper

Gettering of impurities in solar siliconPERICHAUD, I.Solar energy materials and solar cells. 2002, Vol 72, Num 1-4, pp 315-326, issn 0927-0248Conference Paper

LBIC investigation of phosphorus gettered multicrystalline silicon wafersPERICHAUD, I; STEMMER, M; MARTINUZZI, S et al.Journal de physique IV. Colloque. 1991, Vol 1, Num 6, pp C6.199-C6.204Conference Paper